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Rare-Earth Implanted MOS Devices for Silicon Photonics

Microstructural, Electrical and Optoelectronic Properties
Artikelnummer: 978-3-642-14446-2
Einband: Fester Einband
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The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.
EUDR exemption - product or manufacturing materials placed on the market prior to 31.12.2025.
The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.
EUDR exemption - product or manufacturing materials placed on the market prior to 31.12.2025.
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VerlagSpringer
EinbandFester Einband
Erscheinungsjahr2010
Seitenangabe192 S.
AusgabekennzeichenEnglisch
AbbildungenXVIII, 174 p. 120 illus., 3 illus. in color., farbige Illustrationen, schwarz-weiss Illustrationen
MasseH23.5 cm x B15.5 cm 494 g
CoverlagSpringer (Imprint/Brand)
ReiheSpringer Series in Materials Science
AutorRebohle, Lars / Skorupa, Wolfgang

Alle Bände der Reihe "Springer Series in Materials Science"

Über den Autor Lars Rebohle

Lars Rebohle received a Diplom in physics from the Technical University of Dresden in 1995. From 1996 to 2001 he was employed at the Dresden-Rossendorf Research Centre, now Helmholtz-Zentrum Dresden-Rossendorf (HZDR), working on the luminescence properties of ion-implanted, nanocrystalline SiO2 layers. He received his Ph.D. in 1999. After a post-doctoral stay at the Technical University in Vienna in 2002, he worked from 2003 to 2006 in industry dealing with ion implantation, flash lamp annealing and thin film deposition. Since 2007, he has been working as a scientist at the HZDR and engaged in research on Si-based light emitters with rare earth elements. His current research topics include the doping, crystallization and annealing of semiconductor materials and nanostructures in non-thermal equilibrium. From 2010 to 2015 he was guest lecturer at the Technical University Bergakademie Freiberg, where he got his habilitation in 2013.Slawomir Prucnal received a Diplom in physics from the University of Maria Curie-Sklodowska in Lublin, Poland in 2008. From 2008 he as been employed at the HZDR, working on the optoelectronic properties of ion-implanted semiconductors (group IV and III-V), both on bulk and nanostructures. From 2009 to 2011 he carried out postdoctoral work at the TU Bergakademie Freiberg, Institute for Experimental Physics as part of a Cluster of Excellence project, focused on the development of solar cells. His current research topics include hyperdoped semiconductors (e.g. SiSe), ultra-doped Ge for superconductivity and MID plasmonics, defects and doping engineering in Transparent Conductive Oxides (TCOs). Denise Reichel received an interdisciplinary Bachelor of Science in 2005 from the University of Newcastle-upon Tyne, United Kingdom. Thereafter, she continued her studies in applied natural science at the Technical University Bergakademie Freiberg to receive her Diplom in 2008. From 2009 to 2013 she worked at the HZDR in the field of temperature measurement during flash lamp annealing. After a short detour to science communication she has been continuing her scientific career at the AKAD University of Applied Sciences in Stuttgart as a lecturer and tutor in the field of thermodynamics from 2014 until today. In addition she is working as a consultant in technical sales for the pyrometer manufacturer Sensortherm since 2015. She received her Ph.D. in February 2015 and continues studying temperature measurement during lamp-based processing.

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