Dispersion Relations in Heavily-Doped Nanostructures (eBook)

Artikelnummer: 978-3-319-21000-1
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This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

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VerlagSpringer International Publishing
EinbandPDF
Erscheinungsjahr2015
Seitenangabe625 S.
AusgabekennzeichenEnglisch
AbbildungenLV, 625 p.
Masse7'840 KB
PlattformPDF
ReiheSpringer Tracts in Modern Physics; Physics and Astronomy; Physics and Astronomy
AutorGhatak, Kamakhya Prasad

Alle Bände der Reihe "Springer Tracts in Modern Physics; Physics and Astronomy; Physics and Astronomy (R0)"

Über den Autor Kamakhya Prasad Ghatak

Prof. Dr. Engg. Kamakhya Prasad Ghatak of IEM, Kolkata obtained his PhD Degree from the Institute of Radio Physics and Electronics of the Calcutta University in 1988 on the basis of 27 research papers in reputed SCI Journals which is still a record of the said Institute. He is the first Doctor of Engineering Degree awardee of Jadavpur University in 1991(h-index-35, i-10 index- 181& T.C.-5746, the author of  370 SCOPUS publications, 17 books on Nano Technology) and as per World Ranking of top 2% Scientists as prepared by Stanford University, USA, in 2020, he stays within top 1% in the field of Applied Physics. From the position of Assistant Professor in Calcutta University in 1983 up to Senior Professor in the Institute of Engineering and Management, Kolkata in 2015 he was at the top of the merit lists in all the cases. His score in Vidwan portal unit of Government of India is 8.7 out of 10, the highest score among the private Engineering Universities and Institutions of West Bengal. He has produced more than 50 PhD students and the list includes Director, Vice Chancellor, Professors and CEO's of different Private organization. Dr. Madhuchhanda Mitra received her Ph.D. from the University of Calcutta, India. She is a recipient of "Griffith Memorial Award" of the University of Calcutta. Her present research interests are nano-science and technology, identification of different biomarkers and biomedical signal processing which includes feature extraction, compression, encryption and classification of electrocardiography (ECG) and photoplethysmography (PPG) signals. At present, she is a professor in the Department of Applied Physics, University of Calcutta, India, where she has been actively engaged in both teaching and research in Instrumentation. Dr. Arindam Biswas received his M.Tech. in Radio Physics and Electronics from the University of Calcutta, India, in 2010, and Ph.D. from NIT Durgapur, in 2013. He was a postdoctoral researcher at Pusan National University, South Korea, under the prestigious BK21PLUS Fellowship. He was a visiting professor at Research Institute of Electronics, Shizuoka University, Japan. Currently, Dr. Biswas is working as an assistant professor in the School of Mines and Metallurgy, Kazi Nazrul University, Asansol, West Bengal, India. His research interests are in the area of carrier transport in low-dimensional systems and electronic devices, nonlinear optical communications, and THz semiconductor sources.

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